BUK9832-55A,115

BUK9832-55A,115
Attribute
Description
Manufacturer Part Number
BUK9832-55A,115
Manufacturer
Description
MOSFET N-CH 55V 12A SOT223
Note : GST will not be applied to orders shipping outside of India

Stock:
839

Distributor: 118

Lead Time: Not specified

Quantity Unit Price Ext. Price
572 ₹ 27.81 ₹ 15,907.32
121 ₹ 31.15 ₹ 3,769.15
1 ₹ 66.75 ₹ 66.75

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchMOS™
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 55 V
Continuous Drain Current at 25C 12A (Tc)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 29mOhm @ 8A, 10V
Max Threshold Gate Voltage 2V @ 1mA
Max Gate Charge at Vgs -
Maximum Gate Voltage ±10V
Max Input Cap at Vds 1594 pF @ 25 V
Transistor Special Function -
Max Heat Dissipation 8W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style Surface Mount
Vendor Package Type SC-73
Component Housing Style TO-261-4, TO-261AA

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 12A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 55 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Rated as Automotive grade for quality assurance. The highest input capacitance is 1594 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 1594 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR) for component protection or transport. Enclosure/case TO-261-4, TO-261AA providing mechanical and thermal shielding. Enclosure type SC-73 ensuring device integrity. Highest power dissipation 8W (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Certification AEC-Q101 for compliance or testing purposes. Peak Rds(on) at Id and Vgs 29mOhm @ 8A, 10V for MOSFET criteria. Product or component classification series TrenchMOS™. Manufacturer package type SC-73 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±10V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.

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