Stock: 100
Distributor: 135
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 48.46 | ₹ 48,46,000.00 |
| 10000 | ₹ 57.84 | ₹ 5,78,400.00 |
| 1000 | ₹ 64.87 | ₹ 64,870.00 |
| 500 | ₹ 70.35 | ₹ 35,175.00 |
| 100 | ₹ 78.16 | ₹ 7,816.00 |
Stock: 100
Distributor: 160
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 54.00 | ₹ 54,00,000.00 |
| 10000 | ₹ 64.44 | ₹ 6,44,400.00 |
| 1000 | ₹ 72.29 | ₹ 72,290.00 |
| 500 | ₹ 78.38 | ₹ 39,190.00 |
| 100 | ₹ 87.09 | ₹ 8,709.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 100V | |
| Continuous Drain Current at 25C | 49A | |
| Max On-State Resistance | 26 mOhm @ 25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | 38nC @ 10V | |
| Input Cap at Vds | 2891pF @ 25V | |
| Maximum Power Handling | 157W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 49A at 25°C. Supports Vdss drain-to-source voltage rated at 100V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 38nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2891pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 157W for device protection. Peak Rds(on) at Id 38nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 26 mOhm @ 25A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
