BSH112,235

BSH112,235

Data Sheet

Attribute
Description
Manufacturer Part Number
BSH112,235
Manufacturer
Description
MOSFET N-CH 60V 300MA TO236AB
Note : GST will not be applied to orders shipping outside of India

Stock:
4000

Distributor: 160

Lead Time: Not specified

Quantity Unit Price Ext. Price
100000 ₹ 2.60 ₹ 2,60,000.00
10000 ₹ 3.11 ₹ 31,100.00
1000 ₹ 3.48 ₹ 3,480.00
500 ₹ 3.77 ₹ 1,885.00
100 ₹ 4.19 ₹ 419.00

Stock:
4000

Distributor: 135

Lead Time: Not specified


Quantity Unit Price Ext. Price
100000 ₹ 2.60 ₹ 2,60,000.00
10000 ₹ 3.11 ₹ 31,100.00
1000 ₹ 3.48 ₹ 3,480.00
500 ₹ 3.77 ₹ 1,885.00
100 ₹ 4.19 ₹ 419.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line TrenchMOS™
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Obsolete
Field Effect Transistor Type N-Channel
Core Technology Platform MOSFET (Metal Oxide)
Drain-Source Breakdown Volts 60 V
Continuous Drain Current at 25C 300mA (Ta)
Gate Drive Voltage Range 4.5V, 10V
Max On-State Resistance 5Ohm @ 500mA, 10V
Max Threshold Gate Voltage 2V @ 1mA
Max Gate Charge at Vgs -
Maximum Gate Voltage ±15V
Max Input Cap at Vds 40 pF @ 10 V
Transistor Special Function -
Max Heat Dissipation 830mW (Tc)
Ambient Temp Range -65°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Vendor Package Type SOT-23 (TO-236AB)
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Supports a continuous drain current (Id) of 300mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. The highest input capacitance is 40 pF @ 10 V at Vds for safeguarding the device. The input capacitance is rated at 40 pF @ 10 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -65°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Enclosure type SOT-23 (TO-236AB) ensuring device integrity. Highest power dissipation 830mW (Tc) for effective thermal control. Product condition Obsolete for availability and lifecycle. Peak Rds(on) at Id and Vgs 5Ohm @ 500mA, 10V for MOSFET criteria. Product or component classification series TrenchMOS™. Manufacturer package type SOT-23 (TO-236AB) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±15V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 1mA for MOSFET threshold level.

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