Stock: 657
Distributor: 118
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 223 | ₹ 13.35 | ₹ 2,977.05 |
| 26 | ₹ 20.03 | ₹ 520.78 |
| 1 | ₹ 44.50 | ₹ 44.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 385mA (Ta) | |
| Max On-State Resistance | 3 Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Gate Charge at Vgs | 0.69nC @ 10V | |
| Input Cap at Vds | 50pF @ 10V | |
| Maximum Power Handling | 830mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 385mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 0.69nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 50pF @ 10V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Peak power 830mW for device protection. Peak Rds(on) at Id 0.69nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3 Ohm @ 500mA, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold level.