2735GN-100M

2735GN-100M

Data Sheet

Attribute
Description
Manufacturer Part Number
2735GN-100M
Description
FETS RF GAN 150V 2.7-3.5GHZ 55QP
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class 2 N-Channel (Dual) Common Source
Oscillation Rate Hz 2.7GHz ~ 3.5GHz
Amplification Factor 11dB ~ 11.4dB
Test Condition Voltage 60V
Rated Current 2.5mA
Signal-to-Noise Degradation -
Testing Current Value 250mA
Output Wattage Rating 110W
Rated Operating Voltage 150V
Component Housing Style -

Description

Measures resistance at forward current 11dB ~ 11.4dB for LED or diode evaluation. Evaluated at current levels indicated by 250mA. Provides a current rating of 2.5mA. Operates at a frequency of 2.7GHz ~ 3.5GHz. Delivers 11dB ~ 11.4dB gain to improve signal amplification efficiency. Power output 110W for optimal device performance. Type of transistor 2 N-Channel (Dual) Common Source for circuit architecture. Peak Vce(on) at Vge 11dB ~ 11.4dB for transistor parameters. Operating voltage rating 150V for device specifications. Voltage for testing 60V for component assessment.

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