2N7002W-TP

Description

Measures resistance at forward current Tariff may apply if shipping to the United States for LED or diode evaluation. Supports a continuous drain current (Id) of 115mA (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 60 V. Accommodates drive voltage specified at 5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. The highest input capacitance is 50 pF @ 25 V at Vds for safeguarding the device. The input capacitance is rated at 50 pF @ 25 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for component protection or transport. Enclosure/case SC-70, SOT-323 providing mechanical and thermal shielding. Enclosure type SOT-323 ensuring device integrity. Highest power dissipation 200mW (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id and Vgs 7.5Ohm @ 50mA, 5V for MOSFET criteria. Manufacturer package type SOT-323 for component choice. Classification for tariffs Tariff may apply if shipping to the United States regarding import/export. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vce(on) at Vge Tariff may apply if shipping to the United States for transistor parameters. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 2V @ 250µA for MOSFET threshold level.