Stock: 172
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 266.11 | ₹ 266.11 |
| 10 | ₹ 209.15 | ₹ 2,091.50 |
| 100 | ₹ 166.43 | ₹ 16,643.00 |
| 480 | ₹ 138.84 | ₹ 66,643.20 |
| 1200 | ₹ 119.26 | ₹ 1,43,112.00 |
| 2640 | ₹ 113.03 | ₹ 2,98,399.20 |
| 5040 | ₹ 109.47 | ₹ 5,51,728.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 13A (Tc) | |
| Max On-State Resistance | 250 mOhm @ 7.8A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 520µA | |
| Gate Charge at Vgs | 36nC @ 10V | |
| Input Cap at Vds | 1420pF @ 100V | |
| Maximum Power Handling | 114W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 13A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 500V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 36nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1420pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Peak power 114W for device protection. Peak Rds(on) at Id 36nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 250 mOhm @ 7.8A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 520µA for MOSFET threshold level.
