IPB100N04S3-03
Data Sheet
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 100A (Tc) | |
| Max On-State Resistance | 2.5 mOhm @ 80A, 10V | |
| Max Threshold Gate Voltage | 4V @ 150µA | |
| Gate Charge at Vgs | 145nC @ 10V | |
| Input Cap at Vds | 9600pF @ 25V | |
| Maximum Power Handling | 214W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 145nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 9600pF @ 25V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 214W for device protection. Peak Rds(on) at Id 145nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.5 mOhm @ 80A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 150µA for MOSFET threshold level.
