Stock: 810
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 205.59 | ₹ 205.59 |
| 10 | ₹ 131.72 | ₹ 1,317.20 |
| 100 | ₹ 91.67 | ₹ 9,167.00 |
| 500 | ₹ 77.16 | ₹ 38,580.00 |
| 1000 | ₹ 64.35 | ₹ 64,350.00 |
| 2000 | ₹ 59.45 | ₹ 1,18,900.00 |
| 5000 | ₹ 56.25 | ₹ 2,81,250.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 17A (Ta), 45A (Tc) | |
| Max On-State Resistance | 5.7 mOhm @ 45A, 10V | |
| Max Threshold Gate Voltage | 2.8V @ 36µA | |
| Gate Charge at Vgs | 27nC @ 10V | |
| Input Cap at Vds | 2000pF @ 30V | |
| Maximum Power Handling | 3W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 17A (Ta), 45A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 27nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 2000pF @ 30V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 3W for device protection. Peak Rds(on) at Id 27nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5.7 mOhm @ 45A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.8V @ 36µA for MOSFET threshold level.
