IPB049N06L3 G
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 80A | |
| Max On-State Resistance | 4.7 mOhm @ 80A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 58µA | |
| Gate Charge at Vgs | 50nC @ 4.5V | |
| Input Cap at Vds | 8400pF @ 30V | |
| Maximum Power Handling | 115W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 80A at 25°C. Supports Vdss drain-to-source voltage rated at 60V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 50nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 8400pF @ 30V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB providing mechanical and thermal shielding. Peak power 115W for device protection. Peak Rds(on) at Id 50nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 4.7 mOhm @ 80A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 58µA for MOSFET threshold level.
