Stock: 488
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 319.51 | ₹ 319.51 |
| 10 | ₹ 208.26 | ₹ 2,082.60 |
| 100 | ₹ 162.87 | ₹ 16,287.00 |
| 500 | ₹ 136.17 | ₹ 68,085.00 |
| 1000 | ₹ 116.59 | ₹ 1,16,590.00 |
| 2500 | ₹ 110.36 | ₹ 2,75,900.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 20.2A (Tc) | |
| Max On-State Resistance | 190 mOhm @ 9.5A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 630µA | |
| Gate Charge at Vgs | 63nC @ 10V | |
| Input Cap at Vds | 1400pF @ 100V | |
| Maximum Power Handling | 34W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 20.2A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 600V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 63nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1400pF @ 100V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 Full Pack providing mechanical and thermal shielding. Peak power 34W for device protection. Peak Rds(on) at Id 63nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 190 mOhm @ 9.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3.5V @ 630µA for MOSFET threshold level.
