BUZ32 H
Data Sheet
Attribute
Description
Manufacturer Part Number
BUZ32 H
Manufacturer
Description
MOSFET N-CH 200V 9.5A TO220-3
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 9.5A (Tc) | |
| Max On-State Resistance | 400 mOhm @ 6A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 530pF @ 25V | |
| Maximum Power Handling | 75W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 9.5A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 200V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. The input capacitance is rated at 530pF @ 25V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case TO-220-3 providing mechanical and thermal shielding. Peak power 75W for device protection. Peak Rds(on) at Id and Vgs 400 mOhm @ 6A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 1mA for MOSFET threshold level.
