Stock: 9729
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 93.45 | ₹ 93.45 |
| 10 | ₹ 47.26 | ₹ 472.60 |
| 100 | ₹ 35.96 | ₹ 3,596.00 |
| 500 | ₹ 31.59 | ₹ 15,795.00 |
| 1000 | ₹ 26.70 | ₹ 26,700.00 |
| 2500 | ₹ 25.72 | ₹ 64,300.00 |
| 5000 | ₹ 23.23 | ₹ 1,16,150.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 23A (Ta), 100A (Tc) | |
| Max On-State Resistance | 2.8 mOhm @ 30A, 10V | |
| Max Threshold Gate Voltage | 2V @ 10mA | |
| Gate Charge at Vgs | 4nC @ 4.5V | |
| Input Cap at Vds | 1500pF @ 15V | |
| Maximum Power Handling | 48W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 23A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 4nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1500pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 48W for device protection. Peak Rds(on) at Id 4nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 2.8 mOhm @ 30A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2V @ 10mA for MOSFET threshold level.
