Stock: 1715
Distributor: 108
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 164.65 | ₹ 164.65 |
| 10 | ₹ 105.02 | ₹ 1,050.20 |
| 100 | ₹ 70.67 | ₹ 7,067.00 |
| 500 | ₹ 55.89 | ₹ 27,945.00 |
| 1000 | ₹ 51.53 | ₹ 51,530.00 |
| 2500 | ₹ 50.73 | ₹ 1,26,825.00 |
| 5000 | ₹ 42.01 | ₹ 2,10,050.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 40V | |
| Continuous Drain Current at 25C | 30A (Ta), 100A (Tc) | |
| Max On-State Resistance | 1.9 mOhm @ 50A, 10V | |
| Max Threshold Gate Voltage | 4V @ 85µA | |
| Gate Charge at Vgs | 108nC @ 10V | |
| Input Cap at Vds | 8800pF @ 20V | |
| Maximum Power Handling | 125W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-PowerTDFN |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Supports a continuous drain current (Id) of 30A (Ta), 100A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 40V. Accommodates FET classification identified as MOSFET N-Channel, Metal Oxide. Upholds 108nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 8800pF @ 20V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-PowerTDFN providing mechanical and thermal shielding. Peak power 125W for device protection. Peak Rds(on) at Id 108nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 1.9 mOhm @ 50A, 10V for MOSFET criteria. Peak Vgs(th) at Id 4V @ 85µA for MOSFET threshold level.
