MRF8S21120HSR3
Data Sheet
Attribute
Description
Manufacturer Part Number
MRF8S21120HSR3
Manufacturer
Description
FET RF N-CH 2.1GHZ 28V NI780HS
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | LDMOS | |
| Oscillation Rate Hz | 2.17GHz | |
| Amplification Factor | 17.6dB | |
| Test Condition Voltage | 28V | |
| Rated Current | - | |
| Signal-to-Noise Degradation | - | |
| Testing Current Value | 850mA | |
| Output Wattage Rating | 28W | |
| Rated Operating Voltage | 65V | |
| Component Housing Style | NI-780S |
Description
Measures resistance at forward current 17.6dB for LED or diode evaluation. Evaluated at current levels indicated by 850mA. Operates at a frequency of 2.17GHz. Delivers 17.6dB gain to improve signal amplification efficiency. Enclosure/case NI-780S providing mechanical and thermal shielding. Power output 28W for optimal device performance. Type of transistor LDMOS for circuit architecture. Peak Vce(on) at Vge 17.6dB for transistor parameters. Operating voltage rating 65V for device specifications. Voltage for testing 28V for component assessment.
