MRF8P20100HSR3

MRF8P20100HSR3

Data Sheet

Attribute
Description
Manufacturer Part Number
MRF8P20100HSR3
Description
FET RF N-CH 2025MHZ 28V NI780H-4
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
Transistor Class LDMOS (Dual)
Oscillation Rate Hz 2.03GHz
Amplification Factor 16dB
Test Condition Voltage 28V
Rated Current -
Signal-to-Noise Degradation -
Testing Current Value 400mA
Output Wattage Rating 20W
Rated Operating Voltage 65V
Component Housing Style NI-780HS-4

Description

Measures resistance at forward current 16dB for LED or diode evaluation. Evaluated at current levels indicated by 400mA. Operates at a frequency of 2.03GHz. Delivers 16dB gain to improve signal amplification efficiency. Enclosure/case NI-780HS-4 providing mechanical and thermal shielding. Power output 20W for optimal device performance. Type of transistor LDMOS (Dual) for circuit architecture. Peak Vce(on) at Vge 16dB for transistor parameters. Operating voltage rating 65V for device specifications. Voltage for testing 28V for component assessment.

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