AOP605
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N and P-Channel | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 7.5A, 6.6A | |
| Max On-State Resistance | 28 mOhm @ 7.5A, 10V | |
| Max Threshold Gate Voltage | 3V @ 250µA | |
| Gate Charge at Vgs | 16.6nC @ 4.5V | |
| Input Cap at Vds | 820pF @ 15V | |
| Maximum Power Handling | 2.5W | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 8-DIP (0.300", 7.62mm) |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Supports a continuous drain current (Id) of 7.5A, 6.6A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as N and P-Channel. Upholds 16.6nC @ 4.5V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 820pF @ 15V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Enclosure/case 8-DIP (0.300", 7.62mm) providing mechanical and thermal shielding. Peak power 2.5W for device protection. Peak Rds(on) at Id 16.6nC @ 4.5V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 28 mOhm @ 7.5A, 10V for MOSFET criteria. Peak Vgs(th) at Id 3V @ 250µA for MOSFET threshold level.
