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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) Asymmetrical | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 22A, 30A | |
| Max On-State Resistance | 5.2 mOhm @ 20A, 10V | |
| Max Threshold Gate Voltage | 2.2V @ 250µA | |
| Gate Charge at Vgs | 22nC @ 10V | |
| Input Cap at Vds | 1037pF @ 15V | |
| Maximum Power Handling | 3.6W, 4.3W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 8-VDFN Exposed Pad |
Description
Measures resistance at forward current 2 N-Channel (Dual) Asymmetrical for LED or diode evaluation. Supports a continuous drain current (Id) of 22A, 30A at 25°C. Supports Vdss drain-to-source voltage rated at 30V. Accommodates FET classification identified as 2 N-Channel (Dual) Asymmetrical. Upholds 22nC @ 10V gate charge at Vgs for reliable MOSFET functionality. The input capacitance is rated at 1037pF @ 15V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Enclosure/case 8-VDFN Exposed Pad providing mechanical and thermal shielding. Peak power 3.6W, 4.3W for device protection. Peak Rds(on) at Id 22nC @ 10V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 5.2 mOhm @ 20A, 10V for MOSFET criteria. Peak Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold level.
