S1M-E3/61T

S1M-E3/61T
Attribute
Description
Manufacturer Part Number
S1M-E3/61T
Manufacturer
Description
RECTIFIER, 1A, 1000V, SM
Note : GST will not be applied to orders shipping outside of India

Stock:
228600

Distributor: 157

Lead Time: Not specified

Quantity Unit Price Ext. Price
1800 ₹ 2.21 ₹ 3,978.00

Stock:
7254000

Distributor: 113

Lead Time: Not specified


Quantity Unit Price Ext. Price
1800 ₹ 2.49 ₹ 4,482.00
5400 ₹ 2.43 ₹ 13,122.00
18000 ₹ 2.37 ₹ 42,660.00
36000 ₹ 2.33 ₹ 83,880.00
72000 ₹ 2.25 ₹ 1,62,000.00

Stock:
208624

Distributor: 117

Lead Time: Not specified


Quantity Unit Price Ext. Price
90000 ₹ 3.07 ₹ 2,76,300.00
45000 ₹ 3.08 ₹ 1,38,600.00
18000 ₹ 3.45 ₹ 62,100.00
12600 ₹ 3.62 ₹ 45,612.00
9000 ₹ 3.80 ₹ 34,200.00
5400 ₹ 4.09 ₹ 22,086.00
3600 ₹ 4.36 ₹ 15,696.00
1800 ₹ 4.87 ₹ 8,766.00
500 ₹ 7.16 ₹ 3,580.00
100 ₹ 8.02 ₹ 802.00
10 ₹ 8.41 ₹ 84.10
1 ₹ 18.75 ₹ 18.75

Stock:
24

Distributor: 118

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 5.16 ₹ 5.16

Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 1000V (1kV)
Average DC Output Current 1A
Forward Voltage (Vf) 1.1V @ 1A
Operational Speed Rating Standard Recovery >500ns, > 200mA (Io)
trr Recovery 1.8µs
Reverse Leakage Current @ Vr 5µA @ 1000V
Capacitance at Voltage and Frequency 12pF @ 4V, 1MHz
Heat Dissipation Resistance 85°C/W Ja
Junction Temp Range -55°C ~ 150°C
Attachment Mounting Style Surface Mount
Component Housing Style DO-214AC, SMA

Description

Measures resistance at forward current 1.1V @ 1A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 12pF @ 4V, 1MHz. Delivers average rectified current (Io) recorded at 1A. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 85°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case DO-214AC, SMA providing mechanical and thermal shielding. Reverse recovery duration 1.8µs for switching diodes. Velocity Standard Recovery >500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 85°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.

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