MBR1035-E3/45
Data Sheet
Attribute
Description
Manufacturer Part Number
MBR1035-E3/45
Manufacturer
Description
Diodes Rectifiers - Single,
35V,
10A
Manufacturer Lead Time
45 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 35V | |
| Average DC Output Current | 10A | |
| Forward Voltage (Vf) | 840mV @ 20A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | - | |
| Reverse Leakage Current @ Vr | 100µA @ 35V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 2°C/W Jc | |
| Junction Temp Range | -65°C ~ 150°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-220-2 Fused Center, TO-220AC |
Description
Measures resistance at forward current 840mV @ 20A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 10A. Includes diode type indicated as Schottky. Mounting style Through Hole for structural integrity. Resistance in the on-state 2°C/W Jc for efficient conduction. Junction operating temperature -65°C ~ 150°C for component protection. Enclosure/case TO-220-2 Fused Center, TO-220AC providing mechanical and thermal shielding. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 2°C/W Jc for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
