Stock: 12000
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 6.20 | ₹ 18,600.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 200V | |
| Average DC Output Current | 1.2A | |
| Forward Voltage (Vf) | 980mV @ 1A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 25ns | |
| Reverse Leakage Current @ Vr | 10µA @ 200V | |
| Capacitance at Voltage and Frequency | 4pF @ 4V, 50MHz | |
| Heat Dissipation Resistance | 180°C/W Ja | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | DO-219AB |
Description
Measures resistance at forward current 980mV @ 1A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 4pF @ 4V, 50MHz. Delivers average rectified current (Io) recorded at 1.2A. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 180°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case DO-219AB providing mechanical and thermal shielding. Reverse recovery duration 25ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 180°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
