BYG10D-E3/TR
Data Sheet
Attribute
Description
Manufacturer Part Number
BYG10D-E3/TR
Manufacturer
Description
Diodes Rectifiers - Single,
200V,
1.5A
Note :
GST will not be applied to orders shipping outside of India
Stock: 147600
Distributor: 157
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 147600 | ₹ 9.72 | ₹ 14,34,672.00 |
| 1800 | ₹ 10.53 | ₹ 18,954.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Avalanche | |
| Reverse DC Voltage(Vr) | 200V | |
| Average DC Output Current | 1.5A | |
| Forward Voltage (Vf) | 1.15V @ 1.5A | |
| Operational Speed Rating | Standard Recovery >500ns, > 200mA (Io) | |
| trr Recovery | 4µs | |
| Reverse Leakage Current @ Vr | 1µA @ 200V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 25°C/W Jl | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | DO-214AC, SMA |
Description
Measures resistance at forward current 1.15V @ 1.5A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 1.5A. Includes diode type indicated as Avalanche. Mounting style Surface Mount for structural integrity. Resistance in the on-state 25°C/W Jl for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case DO-214AC, SMA providing mechanical and thermal shielding. Reverse recovery duration 4µs for switching diodes. Velocity Standard Recovery >500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 25°C/W Jl for temperature regulation. Peak Vce(on) at Vge Avalanche for transistor parameters.
