AU2PJ-M3/86A
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Avalanche | |
| Reverse DC Voltage(Vr) | 600V | |
| Average DC Output Current | 1.6A (DC) | |
| Forward Voltage (Vf) | 1.9V @ 2A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 75ns | |
| Reverse Leakage Current @ Vr | 10µA @ 600V | |
| Capacitance at Voltage and Frequency | 42pF @ 4V, 1MHz | |
| Heat Dissipation Resistance | 5°C/W Jl | |
| Junction Temp Range | -55°C ~ 175°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-277, 3-PowerDFN |
Description
Measures resistance at forward current 1.9V @ 2A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 42pF @ 4V, 1MHz. Delivers average rectified current (Io) recorded at 1.6A (DC). Includes diode type indicated as Avalanche. Mounting style Surface Mount for structural integrity. Resistance in the on-state 5°C/W Jl for efficient conduction. Junction operating temperature -55°C ~ 175°C for component protection. Enclosure/case TO-277, 3-PowerDFN providing mechanical and thermal shielding. Reverse recovery duration 75ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 5°C/W Jl for temperature regulation. Peak Vce(on) at Vge Avalanche for transistor parameters.
