STPS1150RL

STPS1150RL
Attribute
Description
Manufacturer Part Number
STPS1150RL
Manufacturer
Description
STPS1150 Series 150 V 1 A Through Hole Axial Power Schottky ...
Note : GST will not be applied to orders shipping outside of India

Stock:
150000

Distributor: 116

Lead Time: Not specified

Quantity Unit Price Ext. Price
150000 ₹ 5.64 ₹ 8,46,000.00
75000 ₹ 5.69 ₹ 4,26,750.00
40000 ₹ 5.78 ₹ 2,31,200.00
25000 ₹ 5.87 ₹ 1,46,750.00
15000 ₹ 5.97 ₹ 89,550.00

Stock:
3637

Distributor: 11

Lead Time: Not specified


Quantity Unit Price Ext. Price
2000 ₹ 7.48 ₹ 14,960.00
1000 ₹ 7.83 ₹ 7,830.00
500 ₹ 8.63 ₹ 4,315.00
100 ₹ 10.86 ₹ 1,086.00
20 ₹ 13.97 ₹ 279.40
10 ₹ 15.49 ₹ 154.90
1 ₹ 20.47 ₹ 20.47

Stock:
10000

Distributor: 113

Lead Time: Not specified


Quantity Unit Price Ext. Price
10000 ₹ 8.42 ₹ 84,200.00
20 ₹ 7.69 ₹ 153.80
100 ₹ 7.32 ₹ 732.00
500 ₹ 6.97 ₹ 3,485.00
2500 ₹ 6.48 ₹ 16,200.00

Stock:
8332

Distributor: 142

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 23.14 ₹ 23.14
10 ₹ 13.35 ₹ 133.50
100 ₹ 12.46 ₹ 1,246.00
500 ₹ 10.68 ₹ 5,340.00

Product Attributes

Type Description
Category
Semiconductor Diode Category Schottky
Reverse DC Voltage(Vr) 150V
Average DC Output Current 1A
Forward Voltage (Vf) 820mV @ 1A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery -
Reverse Leakage Current @ Vr 1µA @ 150V
Capacitance at Voltage and Frequency -
Heat Dissipation Resistance 30°C/W Jl
Junction Temp Range 175°C (Max)
Attachment Mounting Style Through Hole
Component Housing Style DO-204AL, DO-41, Axial

Description

Measures resistance at forward current 820mV @ 1A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 1A. Includes diode type indicated as Schottky. Mounting style Through Hole for structural integrity. Resistance in the on-state 30°C/W Jl for efficient conduction. Junction operating temperature 175°C (Max) for component protection. Enclosure/case DO-204AL, DO-41, Axial providing mechanical and thermal shielding. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 30°C/W Jl for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.

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