RFN10B3STL
Data Sheet
Attribute
Description
Manufacturer Part Number
RFN10B3STL
Manufacturer
Description
Other diodes
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 350V | |
| Average DC Output Current | 10A | |
| Forward Voltage (Vf) | 1.5V @ 10A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | 30ns | |
| Reverse Leakage Current @ Vr | 10µA @ 350V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 6°C/W Jc | |
| Junction Temp Range | 150°C (Max) | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current 1.5V @ 10A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 10A. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 6°C/W Jc for efficient conduction. Junction operating temperature 150°C (Max) for component protection. Enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 providing mechanical and thermal shielding. Reverse recovery duration 30ns for switching diodes. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 6°C/W Jc for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
