APT30SCD120S
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 1200V (1.2kV) | |
| Average DC Output Current | 99A (DC) | |
| Forward Voltage (Vf) | 1.8V @ 30A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 600µA @ 1200V | |
| Capacitance at Voltage and Frequency | 2100pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 0.43°C/W Jc | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Description
Measures resistance at forward current 1.8V @ 30A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 2100pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 99A (DC). Includes diode type indicated as Silicon Carbide Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 0.43°C/W Jc for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA providing mechanical and thermal shielding. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Thermal resistance value 0.43°C/W Jc for temperature regulation. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
