JANTX1N4153-1
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 50V | |
| Average DC Output Current | 150mA | |
| Forward Voltage (Vf) | 880mV @ 20mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 4ns | |
| Reverse Leakage Current @ Vr | 50nA @ 50V | |
| Capacitance at Voltage and Frequency | 2pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 250°C/W Jl | |
| Junction Temp Range | -65°C ~ 175°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | DO-204AH, DO-35, Axial |
Description
Measures resistance at forward current 880mV @ 20mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 2pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 150mA. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Resistance in the on-state 250°C/W Jl for efficient conduction. Junction operating temperature -65°C ~ 175°C for component protection. Enclosure/case DO-204AH, DO-35, Axial providing mechanical and thermal shielding. Reverse recovery duration 4ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 250°C/W Jl for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
