1N5554US
Data Sheet
Attribute
Description
Manufacturer Part Number
1N5554US
Manufacturer
Description
Diodes Rectifiers - Single,
1000V (1kV),
3A
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 1000V (1kV) | |
| Average DC Output Current | 3A | |
| Forward Voltage (Vf) | 1.2V @ 9A | |
| Operational Speed Rating | Standard Recovery >500ns, > 200mA (Io) | |
| trr Recovery | 2µs | |
| Reverse Leakage Current @ Vr | 1µA @ 1000V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 6.5°C/W Jl | |
| Junction Temp Range | -65°C ~ 175°C | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Measures resistance at forward current 1.2V @ 9A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 3A. Includes diode type indicated as Standard. Resistance in the on-state 6.5°C/W Jl for efficient conduction. Junction operating temperature -65°C ~ 175°C for component protection. Reverse recovery duration 2µs for switching diodes. Velocity Standard Recovery >500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 6.5°C/W Jl for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.