GS1ME-TP

GS1ME-TP

Data Sheet

Attribute
Description
Manufacturer Part Number
GS1ME-TP
Description
GS1M Series 1000 V 1 A Low Thermal Resistance SMT Silicon Re...
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Stock:
96000

Distributor: 122

Lead Time: Not specified

Quantity Unit Price Ext. Price
120000 ₹ 1.31 ₹ 1,57,200.00
60000 ₹ 1.32 ₹ 79,200.00
30000 ₹ 1.39 ₹ 41,700.00
24000 ₹ 1.41 ₹ 33,840.00
12000 ₹ 1.42 ₹ 17,040.00
6000 ₹ 1.48 ₹ 8,880.00

Stock:
96000

Distributor: 111

Lead Time: Not specified


Quantity Unit Price Ext. Price
120000 ₹ 1.31 ₹ 1,57,200.00
60000 ₹ 1.32 ₹ 79,200.00
30000 ₹ 1.39 ₹ 41,700.00
24000 ₹ 1.41 ₹ 33,840.00
12000 ₹ 1.42 ₹ 17,040.00
6000 ₹ 1.48 ₹ 8,880.00

Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 1000V (1kV)
Average DC Output Current 1A
Forward Voltage (Vf) 1.1V @ 1A
Operational Speed Rating Standard Recovery >500ns, > 200mA (Io)
trr Recovery -
Reverse Leakage Current @ Vr 5µA @ 1000V
Capacitance at Voltage and Frequency 15pF @ 4V, 1MHz
Heat Dissipation Resistance 15°C/W Jl
Junction Temp Range -55°C ~ 150°C
Attachment Mounting Style Surface Mount
Component Housing Style DO-214AC, SMA

Description

Measures resistance at forward current 1.1V @ 1A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 15pF @ 4V, 1MHz. Delivers average rectified current (Io) recorded at 1A. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 15°C/W Jl for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case DO-214AC, SMA providing mechanical and thermal shielding. Velocity Standard Recovery >500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 15°C/W Jl for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.

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