BAV20WS-TP

BAV20WS-TP
Attribute
Description
Manufacturer Part Number
BAV20WS-TP
Description
SWITCHING DIODE, 200V, SOD-323; Diode Ty; SWITCHING DIODE,...
Note : GST will not be applied to orders shipping outside of India

Stock:
13662

Distributor: 117

Lead Time: Not specified

Quantity Unit Price Ext. Price
150000 ₹ 1.97 ₹ 2,95,500.00
75000 ₹ 2.04 ₹ 1,53,000.00
30000 ₹ 2.15 ₹ 64,500.00
21000 ₹ 2.16 ₹ 45,360.00
15000 ₹ 2.17 ₹ 32,550.00
9000 ₹ 2.18 ₹ 19,620.00
6000 ₹ 2.31 ₹ 13,860.00
3000 ₹ 2.52 ₹ 7,560.00
1000 ₹ 3.97 ₹ 3,970.00
500 ₹ 4.52 ₹ 2,260.00
100 ₹ 6.21 ₹ 621.00
10 ₹ 9.87 ₹ 98.70
1 ₹ 15.12 ₹ 15.12

Stock:
2690

Distributor: 11

Lead Time: Not specified


Quantity Unit Price Ext. Price
3000 ₹ 2.86 ₹ 8,580.00
1000 ₹ 3.39 ₹ 3,390.00
500 ₹ 4.01 ₹ 2,005.00
100 ₹ 6.32 ₹ 632.00
10 ₹ 11.60 ₹ 116.00
5 ₹ 12.99 ₹ 64.95
1 ₹ 14.71 ₹ 14.71

Stock:
926

Distributor: 120

Lead Time: Not specified


Quantity Unit Price Ext. Price
890 ₹ 3.01 ₹ 2,678.90
135 ₹ 5.01 ₹ 676.35
45 ₹ 10.01 ₹ 450.45

Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 150V
Average DC Output Current 200mA
Forward Voltage (Vf) 1.25V @ 200mA
Operational Speed Rating Small Signal =< 200mA (Io), Any Speed
trr Recovery 50ns
Reverse Leakage Current @ Vr 100nA @ 150V
Capacitance at Voltage and Frequency 1.5pF @ 0V, 1MHz
Heat Dissipation Resistance 500°C/W Ja
Junction Temp Range -65°C ~ 150°C
Attachment Mounting Style Surface Mount
Component Housing Style SC-76, SOD-323

Description

Measures resistance at forward current 1.25V @ 200mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 1.5pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 200mA. Includes diode type indicated as Standard. Mounting style Surface Mount for structural integrity. Resistance in the on-state 500°C/W Ja for efficient conduction. Junction operating temperature -65°C ~ 150°C for component protection. Enclosure/case SC-76, SOD-323 providing mechanical and thermal shielding. Reverse recovery duration 50ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 500°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.

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