BAT42W-TP
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 30V | |
| Average DC Output Current | 200mA (DC) | |
| Forward Voltage (Vf) | 1V @ 200mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 5ns | |
| Reverse Leakage Current @ Vr | 500nA @ 25V | |
| Capacitance at Voltage and Frequency | 7pF @ 1V, 1MHz | |
| Heat Dissipation Resistance | 300°C/W Ja | |
| Junction Temp Range | -55°C ~ 125°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOD-123 |
Description
Measures resistance at forward current 1V @ 200mA for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 7pF @ 1V, 1MHz. Delivers average rectified current (Io) recorded at 200mA (DC). Includes diode type indicated as Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 300°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 125°C for component protection. Enclosure/case SOD-123 providing mechanical and thermal shielding. Reverse recovery duration 5ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 300°C/W Ja for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
