1N914B-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
1N914B-TP
Manufacturer
Description
SWITCHING DIODE,
100V,
DO-35; Diode Type; SWITCHING DIODE,...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Standard | |
| Reverse DC Voltage(Vr) | 100V | |
| Average DC Output Current | 200mA | |
| Forward Voltage (Vf) | 1V @ 100mA | |
| Operational Speed Rating | Small Signal =< 200mA (Io), Any Speed | |
| trr Recovery | 4ns | |
| Reverse Leakage Current @ Vr | 5µA @ 75V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 300°C/W Ja | |
| Junction Temp Range | -55°C ~ 150°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | DO-204AH, DO-35, Axial |
Description
Measures resistance at forward current 1V @ 100mA for LED or diode evaluation. Delivers average rectified current (Io) recorded at 200mA. Includes diode type indicated as Standard. Mounting style Through Hole for structural integrity. Resistance in the on-state 300°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 150°C for component protection. Enclosure/case DO-204AH, DO-35, Axial providing mechanical and thermal shielding. Reverse recovery duration 4ns for switching diodes. Velocity Small Signal =< 200mA (Io), Any Speed for mechanical or data efficiency. Thermal resistance value 300°C/W Ja for temperature regulation. Peak Vce(on) at Vge Standard for transistor parameters.
