1N5818-TP
Data Sheet
Attribute
Description
Manufacturer Part Number
1N5818-TP
Manufacturer
Description
Other diodes
Manufacturer Lead Time
18 weeks
Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 30V | |
| Average DC Output Current | 1A | |
| Forward Voltage (Vf) | 550mV @ 1A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | - | |
| Reverse Leakage Current @ Vr | 1mA @ 30V | |
| Capacitance at Voltage and Frequency | - | |
| Heat Dissipation Resistance | 80°C/W Ja | |
| Junction Temp Range | -55°C ~ 125°C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | DO-204AL, DO-41, Axial |
Description
Measures resistance at forward current 550mV @ 1A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 1A. Includes diode type indicated as Schottky. Mounting style Through Hole for structural integrity. Resistance in the on-state 80°C/W Ja for efficient conduction. Junction operating temperature -55°C ~ 125°C for component protection. Enclosure/case DO-204AL, DO-41, Axial providing mechanical and thermal shielding. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 80°C/W Ja for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
