BAT1000-7-F
Data Sheet
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 40V | |
| Average DC Output Current | 1A | |
| Forward Voltage (Vf) | 500mV @ 1A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | - | |
| Reverse Leakage Current @ Vr | 100µA @ 30V | |
| Capacitance at Voltage and Frequency | 175pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | 200°C/W Ja | |
| Junction Temp Range | -40°C ~ 125°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current 500mV @ 1A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 175pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 1A. Includes diode type indicated as Schottky. Mounting style Surface Mount for structural integrity. Resistance in the on-state 200°C/W Ja for efficient conduction. Junction operating temperature -40°C ~ 125°C for component protection. Enclosure/case TO-236-3, SC-59, SOT-23-3 providing mechanical and thermal shielding. Velocity Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data efficiency. Thermal resistance value 200°C/W Ja for temperature regulation. Peak Vce(on) at Vge Schottky for transistor parameters.
