Home Products Diodes Transistors And Thyristors Bridge Rectifier Assemblies Cree Inc CPW31700S010BWP
Attribute
Description
Manufacturer Part Number
CPW3-1700-S010B-WP
Manufacturer
Description
Diodes Rectifiers - Single,
1700V (1.7kV),
10A
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) | 1700V (1.7kV) | |
| Average DC Output Current | 10A | |
| Forward Voltage (Vf) | 2V @ 10A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Reverse Leakage Current @ Vr | 50µA @ 1700V | |
| Capacitance at Voltage and Frequency | 880pF @ 0V, 1MHz | |
| Heat Dissipation Resistance | - | |
| Junction Temp Range | -55°C ~ 175°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Wafer, Sawn on Foil |
Description
Measures resistance at forward current 2V @ 10A for LED or diode evaluation. Accommodates capacitance at Vr and frequency specified as 880pF @ 0V, 1MHz. Delivers average rectified current (Io) recorded at 10A. Includes diode type indicated as Silicon Carbide Schottky. Mounting style Surface Mount for structural integrity. Junction operating temperature -55°C ~ 175°C for component protection. Enclosure/case Wafer, Sawn on Foil providing mechanical and thermal shielding. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
