C3D20060D
Data Sheet
Attribute
Description
Manufacturer Part Number
C3D20060D
Manufacturer
Description
SIC SCHOTTKY DIODE,
600V,
2X10A,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Diode Setup | 1 Pair Common Cathode | |
| Semiconductor Diode Category | Silicon Carbide Schottky | |
| Reverse DC Voltage(Vr) (Max) | 600V | |
| Average DC Output Current | 10A | |
| Forward Voltage (Vf) | 1.8V @ 10A | |
| Operational Speed Rating | No Recovery Time > 500mA (Io) | |
| trr Recovery | 0ns | |
| Leakage at Vr | 50µA @ 600V | |
| Attachment Mounting Style | Through Hole, Radial | |
| Component Housing Style | TO-247-3 |
Description
Measures resistance at forward current 1.8V @ 10A for LED or diode evaluation. Delivers average rectified current (Io) recorded at 10A. Utilizes diode arrangement recognized as 1 Pair Common Cathode. Includes diode type indicated as Silicon Carbide Schottky. Mounting style Through Hole, Radial for structural integrity. Enclosure/case TO-247-3 providing mechanical and thermal shielding. Reverse leakage current at Vr 50µA @ 600V for diode parameters. Reverse recovery duration 0ns for switching diodes. Velocity No Recovery Time > 500mA (Io) for mechanical or data efficiency. Peak Vce(on) at Vge Silicon Carbide Schottky for transistor parameters.
