Stock: 1
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1000 | ₹ 28.48 | ₹ 28,480.00 |
| 500 | ₹ 35.60 | ₹ 17,800.00 |
| 100 | ₹ 41.30 | ₹ 4,130.00 |
| 10 | ₹ 51.26 | ₹ 512.60 |
| 1 | ₹ 64.97 | ₹ 64.97 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | P-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 30 V | |
| Continuous Drain Current at 25C | 90A (Tc) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 3.5mOhm @ 45A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA (Min) | |
| Max Gate Charge at Vgs | 36 nC @ 4.5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 6725 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 300W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-220 | |
| Component Housing Style | TO-220-2 |
Description
Supports a continuous drain current (Id) of 90A (Tc) at 25°C. Supports Vdss drain-to-source voltage rated at 30 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as P-Channel. Guarantees maximum 36 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 36 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 6725 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 6725 pF @ 15 V at Vds for optimal performance. Mounting style Through Hole for structural integrity. Operating temperature -55°C ~ 175°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case TO-220-2 providing mechanical and thermal shielding. Enclosure type TO-220 ensuring device integrity. Highest power dissipation 300W (Tc) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 36 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 3.5mOhm @ 45A, 10V for MOSFET criteria. Manufacturer package type TO-220 for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA (Min) for MOSFET threshold level.
