Stock: 1
Distributor: 117
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 17.80 | ₹ 53,400.00 |
| 1000 | ₹ 20.47 | ₹ 20,470.00 |
| 500 | ₹ 24.92 | ₹ 12,460.00 |
| 100 | ₹ 32.04 | ₹ 3,204.00 |
| 10 | ₹ 35.60 | ₹ 356.00 |
| 1 | ₹ 53.40 | ₹ 53.40 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 40 V | |
| Continuous Drain Current at 25C | 18A (Ta) | |
| Gate Drive Voltage Range | 4.5V, 10V | |
| Max On-State Resistance | 7mOhm @ 6A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 18 nC @ 4.5 V | |
| Maximum Gate Voltage | ±20V | |
| Max Input Cap at Vds | 2710 pF @ 15 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 3.5W (Ta) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Vendor Package Type | 8-DFN (3x3) | |
| Component Housing Style | 8-PowerVDFN |
Description
Supports a continuous drain current (Id) of 18A (Ta) at 25°C. Supports Vdss drain-to-source voltage rated at 40 V. Accommodates drive voltage specified at 4.5V, 10V for RdsOn regulation. Accommodates FET classification identified as N-Channel. Guarantees maximum 18 nC @ 4.5 V gate charge at Vgs for enhanced switching efficiency. Upholds 18 nC @ 4.5 V gate charge at Vgs for reliable MOSFET functionality. The highest input capacitance is 2710 pF @ 15 V at Vds for safeguarding the device. The input capacitance is rated at 2710 pF @ 15 V at Vds for optimal performance. Mounting style Surface Mount for structural integrity. Operating temperature -55°C ~ 150°C (TJ) for thermal stability. Enclosure Bulk for component protection or transport. Enclosure/case 8-PowerVDFN providing mechanical and thermal shielding. Enclosure type 8-DFN (3x3) ensuring device integrity. Highest power dissipation 3.5W (Ta) for effective thermal control. Product condition Active for availability and lifecycle. Peak Rds(on) at Id 18 nC @ 4.5 V for MOSFET efficiency. Peak Rds(on) at Id and Vgs 7mOhm @ 6A, 10V for MOSFET criteria. Manufacturer package type 8-DFN (3x3) for component choice. Platform technology MOSFET (Metal Oxide) for the type of product. Peak Vgs ±20V for MOSFET parameters. Peak Vgs(th) at Id 1V @ 250µA for MOSFET threshold level.
