Junction Field Effect Transistors,25V,500mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 25V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 24mA @ 10V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 2.5V @ 1nA
Power - Max 500mW
Input Capacitance (Ciss) @ Vds 5pF @ 10V
Resistance - RDS(On) -
Mounting Type Through Hole
Package / Case TO-206AC, TO-52-3 Metal Can