Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A, 32A
Rds On (Max) @ Id, Vgs 7.1 mOhm @ 18.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) @ Vds 1260pF @ 15V
Power - Max 4.3W, 5.2W
Mounting Type Surface Mount
Package / Case -