Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 16A, 35A
Rds On (Max) @ Id, Vgs 7.7 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 890pF @ 12.5V
Power - Max 27W, 48W
Mounting Type Surface Mount
Package / Case -