Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs 5.4 mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs 180nC @ 8V
Input Capacitance (Ciss) @ Vds 5700pF @ 10V
Power - Max 3.7W
Mounting Type Surface Mount
Package / Case PowerPAK 1212-8