MOSFET, 30V, 60A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):830µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.1V; Power Dissipation Pd:104W; Transistor Case Style:PowerPAK SO; No. of Pins:8; Operating T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 58A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 220nC @ 10V
Input Capacitance (Ciss) @ Vds 11700pF @ 15V
Power - Max 104W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8