Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.8A
Rds On (Max) @ Id, Vgs 35 mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)