Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 10.5A
Rds On (Max) @ Id, Vgs 80 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 13nC @ 5V
Input Capacitance (Ciss) @ Vds 600pF @ 10V
Power - Max 13W
Mounting Type Surface Mount
Package / Case -