Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 2.1A
Rds On (Max) @ Id, Vgs 150 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.4W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual