Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 31A (Ta)
Rds On (Max) @ Id, Vgs 3.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 225nC @ 10V
Input Capacitance (Ciss) @ Vds 6600pF @ 10V
Power - Max 4.8W
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8S