Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10.4A (Ta)
Rds On (Max) @ Id, Vgs 23 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) @ Vgs 29.5nC @ 10V
Input Capacitance (Ciss) @ Vds 900pF @ 50V
Power - Max 5W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8