Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc)
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 666pF @ 50V
Power - Max 52W
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8