Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.1A
Rds On (Max) @ Id, Vgs 30 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 10.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 830mW
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width)